A3T21H455W23S 製品情報|NXP

A3T21H455W23S

生産終了 (EOL)

A3T21H455W23S

生産終了 (EOL)

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
2110
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
30
パラメータ
Peak Power (Typ) (dBm)
57
Peak Power (Typ) (W)
501
Die Technology
LDMOS

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
A3T21H455W23SR6(935368316128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6258.0

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
A3T21H455W23SR6
(935368316128)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:
A3T21H455W23SR6
(935368316128)
854233

詳細 A3T21H455W23S

The A3T21H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.