AFT09MS015N|16 W CW, 136-941 MHz, 12.5 V | NXP Semiconductors

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136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor

AFT09MS015N
NRND
The AFT09MS015NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

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Features

  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
  • Output or Driver Stage VHF Band Mobile Radio
  • Output or Driver Stage UHF Band Mobile Radio
  • Output or Driver Stage for 700-800 MHz Mobile Radio

RF Performance Tables

Narrowband Performance

(12.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
870(1)17.277.016

Wideband Performance

(12.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Pin
(W)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
136-1740.3816.060.015
350-4700.2318.560.016
760-870(2)0.3216.852.315

Ruggedness, 870 MHz

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
870(1)CW> 65:1
at all Phase
Angles		 0.5
(3 dB
Overdrive)		17No
Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz UHF broadband reference circuit.

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N true 0 PSPAFT09MS015Nja 5 アプリケーション・ノート Application Note t789 2 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ホワイト・ペーパ White Paper t530 1 ja ja ja データ・シート Data Sheet 1 1 1 English The AFT09MS015N is designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in mobile radio equipment. 1393023087665716662517 PSP 814.9 KB None None documents None 1393023087665716662517 /docs/en/data-sheet/AFT09MS015N.pdf 814879 /docs/en/data-sheet/AFT09MS015N.pdf AFT09MS015N documents N N 2016-10-31 AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/AFT09MS015N.pdf /docs/en/data-sheet/AFT09MS015N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 18, 2014 980000996212993340 Data Sheet Y N AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages パッケージ情報 Package Information 1 4 A English 1370451903375708697913 PSP 55.3 KB None None documents None 1370451903375708697913 /docs/en/package-information/98ASA00476D.pdf 55307 /docs/en/package-information/98ASA00476D.pdf SOT1811-2 documents N N 2016-10-31 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf /docs/en/package-information/98ASA00476D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins ホワイト・ペーパ White Paper 1 5 2 English Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. 1415247676533716175304 PSP 911.8 KB None None documents None 1415247676533716175304 /docs/en/white-paper/RFPLASTICWP.pdf 911768 /docs/en/white-paper/RFPLASTICWP.pdf RFPLASTICWP documents N N 2016-10-31 Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf /docs/en/white-paper/RFPLASTICWP.pdf White Paper N 918633085541740938 2024-03-13 pdf N en Sep 24, 2015 918633085541740938 White Paper Y N Designing with Plastic RF Power Transistors White Paper false 0 AFT09MS015N downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 データ・シート 1 /docs/en/data-sheet/AFT09MS015N.pdf 2016-10-31 1393023087665716662517 PSP 1 Jul 18, 2014 Data Sheet The AFT09MS015N is designed for mobile two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in mobile radio equipment. None /docs/en/data-sheet/AFT09MS015N.pdf English documents 814879 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT09MS015N.pdf AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/AFT09MS015N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N AFT09MS015NT1 136-941 MHz, 16 W, 12.5 V Wideband RF Power LDMOS Transistor - Data Sheet 814.9 KB AFT09MS015N N 1393023087665716662517 パッケージ情報 1 /docs/en/package-information/98ASA00476D.pdf 2016-10-31 1370451903375708697913 PSP 4 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00476D.pdf English documents 55307 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00476D.pdf 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins 55.3 KB SOT1811-2 N 1370451903375708697913 ホワイト・ペーパ 1 /docs/en/white-paper/RFPLASTICWP.pdf 2016-10-31 1415247676533716175304 PSP 5 Sep 24, 2015 White Paper Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. None /docs/en/white-paper/RFPLASTICWP.pdf English documents 911768 None 918633085541740938 2024-03-13 N /docs/en/white-paper/RFPLASTICWP.pdf Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf documents 918633085541740938 White Paper N en None Y pdf 2 N N Designing with Plastic RF Power Transistors White Paper 911.8 KB RFPLASTICWP N 1415247676533716175304 true Y Products

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