MRF6V14300H|330 W Pulse, 1400 MHz, 50 V | NXP Semiconductors

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1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

MRF6V14300H
NRND
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The MRF6V14300HR3 and MRF6V14300HSR3 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These device are suitable for use in pulsed applications.

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製品詳細

Features

  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%
    Power Gain: 18 dB
    Drain Efficiency: 60.5%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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N true 0 PSPMRF6V14300Hja 6 アプリケーション・ノート Application Note t789 1 カタログ Brochure t518 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ホワイト・ペーパ White Paper t530 1 ja ja ja データ・シート Data Sheet 1 1 3 English RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. Thes devices are suitable for use in pulsed applications. 1225476928531703498488 PSP 652.9 KB None None documents None 1225476928531703498488 /docs/en/data-sheet/MRF6V14300H.pdf 652927 /docs/en/data-sheet/MRF6V14300H.pdf MRF6V14300H documents N N 2016-10-31 MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6V14300H.pdf /docs/en/data-sheet/MRF6V14300H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 28, 2010 980000996212993340 Data Sheet Y N MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs アプリケーション・ノート Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note カタログ Brochure 1 3 2 English Comprehensive portfolio of RF power transistors for commercial aerospace applications. 1243895030259713217473 PSP 1.9 MB None None documents None 1243895030259713217473 /docs/en/brochure/BR1608.pdf 1872765 /docs/en/brochure/BR1608.pdf BR1608 documents N N 2016-10-31 RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf /docs/en/brochure/BR1608.pdf Brochure N 712453003803778552 2024-03-13 pdf N en Sep 4, 2015 712453003803778552 Brochure Y N RF Solutions for Commercial Aerospace パッケージ情報 Package Information 2 4 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 5 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins ホワイト・ペーパ White Paper 1 6 4 English In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. 1221085238616699797555 PSP 965.1 KB None None documents None 1221085238616699797555 /docs/en/white-paper/50VRFLDMOSWP.pdf 965097 /docs/en/white-paper/50VRFLDMOSWP.pdf 50VRFLDMOSWP documents N N 2016-10-31 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf /docs/en/white-paper/50VRFLDMOSWP.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Sep 8, 2011 918633085541740938 White Paper Y N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications false 0 MRF6V14300H downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 カタログ 1 /docs/en/brochure/BR1608.pdf 2016-10-31 1243895030259713217473 PSP 3 Sep 4, 2015 Brochure Comprehensive portfolio of RF power transistors for commercial aerospace applications. None /docs/en/brochure/BR1608.pdf English documents 1872765 None 712453003803778552 2024-03-13 N /docs/en/brochure/BR1608.pdf RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf documents 712453003803778552 Brochure N en None Y pdf 2 N N RF Solutions for Commercial Aerospace 1.9 MB BR1608 N 1243895030259713217473 データ・シート 1 /docs/en/data-sheet/MRF6V14300H.pdf 2016-10-31 1225476928531703498488 PSP 1 Apr 28, 2010 Data Sheet RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. Thes devices are suitable for use in pulsed applications. None /docs/en/data-sheet/MRF6V14300H.pdf English documents 652927 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6V14300H.pdf MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6V14300H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N N MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 652.9 KB MRF6V14300H N 1225476928531703498488 パッケージ情報 2 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 4 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 5 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 ホワイト・ペーパ 1 /docs/en/white-paper/50VRFLDMOSWP.pdf 2016-10-31 1221085238616699797555 PSP 6 Sep 8, 2011 White Paper In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. None /docs/en/white-paper/50VRFLDMOSWP.pdf English documents 965097 None 918633085541740938 2022-12-07 N /docs/en/white-paper/50VRFLDMOSWP.pdf 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf documents 918633085541740938 White Paper N en None Y pdf 4 N N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications 965.1 KB 50VRFLDMOSWP N 1221085238616699797555 true Y Products

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