MRF8VP13350N|700-1300 MHz, 350 W CW, 50 V | NXP Semiconductors

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700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

MRF8VP13350N
NRND
  • このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
These 350 W CW transistors, MRF8VP13350N and MRF8VP13350GN, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation.

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Features

  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

RF Performance Tables

1300 MHz

VDD = 50 Vdc
Frequency
(MHz)		 Signal Type Gps
(dB)		 ηD
(%)		 Pout
(W)
1300(1)Pulse
(100 µsec, 20% Duty Cycle)		19.258.0350 Peak

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc
Frequency
(MHz)		 Signal Type Gps
(dB)		 ηD
(%)		 Pout
(W)
915CW20.767.5355

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
1300(1) Pulse
(100 µsec,
20% Duty Cycle)		 > 20:1 at all
Phase Angles		 9.6 Peak
(3 dB Overdrive)		 50 No Device
Degradation
1. Measured in 1300 MHz pulse narrowband test circuit.

購入/パラメータ

2 結果

除外 2 NRND

パーツ

説明を表示

注文

コンピュータ支援設計 モデル

状況

MRF8VP13350N
データ・シート

新規採用非推奨

MRF8VP13350GN
データ・シート

生産終了 (EOL)

N true 0 PSPMRF8VP13350Nja 8 アプリケーション・ノート Application Note t789 2 エンジニアリング・ブリテン Technical Notes t521 1 サポート情報 Supporting Information t531 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ホワイト・ペーパ White Paper t530 1 ja ja ja データ・シート Data Sheet 1 1 2 English 350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. Narrowband pulse capability. 1430593270261707694068 PSP 821.1 KB None None documents None 1430593270261707694068 /docs/en/data-sheet/MRF8VP13350N.pdf 821095 /docs/en/data-sheet/MRF8VP13350N.pdf MRF8VP13350N documents N N 2017-02-17 MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet /docs/en/data-sheet/MRF8VP13350N.pdf /docs/en/data-sheet/MRF8VP13350N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 17, 2017 980000996212993340 Data Sheet Y N MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages エンジニアリング・ブリテン Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 2 5 E English 1385568194773698055909 PSP 76.8 KB None None documents None 1385568194773698055909 /docs/en/package-information/98ASA10834D.pdf 76788 /docs/en/package-information/98ASA10834D.pdf SOT1825-1 documents N N 2016-10-31 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins /docs/en/package-information/98ASA10834D.pdf /docs/en/package-information/98ASA10834D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins 6 B English 98ASA10833D, OM-780-4L Straight Lead 1320204697071704615089 PSP 69.8 KB None None documents None 1320204697071704615089 /docs/en/package-information/98ASA10833D.pdf 69766 /docs/en/package-information/98ASA10833D.pdf SOT1818-4 documents N N 2016-10-31 98ASA10833D /docs/en/package-information/98ASA10833D.pdf /docs/en/package-information/98ASA10833D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10833D サポート情報 Supporting Information 1 7 0 English Cost-Effective Plastic Packaging to Extremely Rugged LDMOS Transistors 1430876318653716692360 PSP 421.7 KB None None documents None 1430876318653716692360 /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf 421702 /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf MRF8VP13350N_TRN_SL documents N N 2016-10-31 New NXP<sup>®</sup> RF Industrial Transistor /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en May 5, 2015 371282830530968666 Supporting Information Y N New NXP<sup>®</sup> RF Industrial Transistor ホワイト・ペーパ White Paper 1 8 1 English NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. 1486618696473728474245 PSP 414.0 KB None None documents None 1486618696473728474245 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 413950 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf rf-energy-in-medicine-white-paper documents N N 2017-02-08 RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Oct 19, 2017 918633085541740938 White Paper Y N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power false 0 MRF8VP13350N downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 サポート情報 1 /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf 2016-10-31 1430876318653716692360 PSP 7 May 5, 2015 Supporting Information Cost-Effective Plastic Packaging to Extremely Rugged LDMOS Transistors None /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf English documents 421702 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf New NXP<sup>®</sup> RF Industrial Transistor /docs/en/supporting-information/MRF8VP13350N_TRN_Sl.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N New NXP<sup>®</sup> RF Industrial Transistor 421.7 KB MRF8VP13350N_TRN_SL N 1430876318653716692360 データ・シート 1 /docs/en/data-sheet/MRF8VP13350N.pdf 2017-02-17 1430593270261707694068 PSP 1 Feb 17, 2017 Data Sheet 350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. Narrowband pulse capability. None /docs/en/data-sheet/MRF8VP13350N.pdf English documents 821095 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF8VP13350N.pdf MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet /docs/en/data-sheet/MRF8VP13350N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet 821.1 KB MRF8VP13350N N 1430593270261707694068 パッケージ情報 2 /docs/en/package-information/98ASA10834D.pdf 2016-10-31 1385568194773698055909 PSP 5 Mar 22, 2016 Package Information None /docs/en/package-information/98ASA10834D.pdf English documents 76788 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10834D.pdf 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins /docs/en/package-information/98ASA10834D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins 76.8 KB SOT1825-1 N 1385568194773698055909 /docs/en/package-information/98ASA10833D.pdf 2016-10-31 1320204697071704615089 PSP 6 Mar 22, 2016 Package Information 98ASA10833D, OM-780-4L Straight Lead None /docs/en/package-information/98ASA10833D.pdf English documents 69766 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10833D.pdf 98ASA10833D /docs/en/package-information/98ASA10833D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10833D 69.8 KB SOT1818-4 N 1320204697071704615089 ホワイト・ペーパ 1 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 2017-02-08 1486618696473728474245 PSP 8 Oct 19, 2017 White Paper NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. None /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf English documents 413950 None 918633085541740938 2022-12-07 N /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf documents 918633085541740938 White Paper N en None Y pdf 1 N N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power 414.0 KB rf-energy-in-medicine-white-paper N 1486618696473728474245 true Y Products

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