MRFX035H|35 W CW, 1.8-512 MHz, 65 V | NXP Semiconductors

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35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX035H
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The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.

Features

  • Unmatched input and output allowing wide frequency range utilization
  • 50 ohm native output impedance
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

VDD = 65 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
1.8-54 (1,2)CW32 CW24.158.1
30-512 (2)CW26 CW15.142.3
230 (3)CW35 CW24.875.8

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(dBm)		 Test
Voltage		 Result
230 (3)CW> 65:1
at all Phase Angles		23.5
(3 dB Overdrive)		65No Device Degradation
1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

購入/パラメータ

2 結果

マッチしていない 1 NRND

パーツ

説明を表示

注文

コンピュータ支援設計 モデル

状況

MRFX035H-2MHZ
データ・シート

アクティブ

MRFX035H-30MHZ
データ・シート

アクティブ

N true 0 PSPMRFX035Hja 4 アプリケーション・ノート Application Note t789 1 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English MRFX035H 35 W CW over 1.8-512 MHz, 65 V RF power transistor for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. 1545111267004737301798 PSP 495.2 KB None None documents None 1545111267004737301798 /docs/en/data-sheet/MRFX035H.pdf 495154 /docs/en/data-sheet/MRFX035H.pdf MRFX035H documents N N 2018-12-17 MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX035H.pdf /docs/en/data-sheet/MRFX035H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 17, 2018 980000996212993340 Data Sheet Y N MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet アプリケーション・ノート Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages エンジニアリング・ブリテン Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 4 O English 98ASA00795D, NI-360H-2SB 1415229469957723384286 PSP 49.4 KB None None documents None 1415229469957723384286 /docs/en/package-information/98ASA00795D.pdf 49376 /docs/en/package-information/98ASA00795D.pdf SOT1791-1 documents N N 2016-10-31 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf /docs/en/package-information/98ASA00795D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 5, 2014 302435339416912908 Package Information D N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB false 0 MRFX035H downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/MRFX035H.pdf 2018-12-17 1545111267004737301798 PSP 1 Dec 17, 2018 Data Sheet MRFX035H 35 W CW over 1.8-512 MHz, 65 V RF power transistor for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. None /docs/en/data-sheet/MRFX035H.pdf English documents 495154 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX035H.pdf MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX035H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet 495.2 KB MRFX035H N 1545111267004737301798 パッケージ情報 1 /docs/en/package-information/98ASA00795D.pdf 2016-10-31 1415229469957723384286 PSP 4 Nov 5, 2014 Package Information 98ASA00795D, NI-360H-2SB None /docs/en/package-information/98ASA00795D.pdf English documents 49376 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00795D.pdf 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB 49.4 KB SOT1791-1 N 1415229469957723384286 true Y Products

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