MW6S004N|1-2000 MHz, 4 W, 28 V LDMOS | NXP Semiconductors

1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET

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Features

  • Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
    Power Gain: 18 dB
    Drain Efficiency: 33%
    IMD: –34 dBc
  • Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
    Power Gain: 19 dB
    Drain Efficiency: 33%
    IMD: –39 dBc
  • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

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N true 0 PSPMW6S004NT1ja 2 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 4 English Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 1136501699625709838469 PSP 510.6 KB None None documents None 1136501699625709838469 /docs/en/data-sheet/MW6S004N.pdf 510614 /docs/en/data-sheet/MW6S004N.pdf MW6S004N documents N N 2016-10-31 MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MW6S004N.pdf /docs/en/data-sheet/MW6S004N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 19, 2009 980000996212993340 Data Sheet Y N MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET パッケージ情報 Package Information 1 2 E English 98ASB15740C, 466-03, PLD-1.5 V1003176855715 PSP 51.5 KB None None documents None V1003176855715 /docs/en/package-information/98ASB15740C.pdf 51489 /docs/en/package-information/98ASB15740C.pdf SOT1811-1 documents N N 2016-10-31 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf /docs/en/package-information/98ASB15740C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins false 0 MW6S004NT1 downloads ja true 1 Y PSP データ・シート 1 /docs/en/data-sheet/MW6S004N.pdf 2016-10-31 1136501699625709838469 PSP 1 Jun 19, 2009 Data Sheet Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. None /docs/en/data-sheet/MW6S004N.pdf English documents 510614 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MW6S004N.pdf MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MW6S004N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4 N N MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 510.6 KB MW6S004N N 1136501699625709838469 パッケージ情報 1 /docs/en/package-information/98ASB15740C.pdf 2016-10-31 V1003176855715 PSP 2 Mar 22, 2016 Package Information 98ASB15740C, 466-03, PLD-1.5 None /docs/en/package-information/98ASB15740C.pdf English documents 51489 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15740C.pdf 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins 51.5 KB SOT1811-1 N V1003176855715 true Y Products

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