MHT2012N|2450 MHz, 12.5 W CW, 28 V | NXP Semiconductors

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2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

MHT2012N
NRND
The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.

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Features

  • High gain simplifies layout and reduced PCB area compared to a discrete design
  • Qualified up to a maximum of 32 VDD operation
  • On-chip input and interstage matching (50 ohm input)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • 150°C case and junction temperature ratinge
  • Ideal as a driver for high power RF energy applications
  • RoHS compliant
  • Driver for consumer and commercial cooking applications
  • Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
  • Driver for medical applications, such as microwave ablation, renal denervation and diathermy
  • Final stage for portable heating devices and portable medical systems

RF Performance Table

Typical Performance

VDD = 28 Vdc, Pin = 11 dBm, IDQ1 = 15 mA, IDQ2 = 75 mA
Frequency
(MHz)		 Signal Type Gps
(dB)		 PAE
(%)		 Pout
(W)
2400CW30.151.313.0
245030.051.412.7
250029.750.511.7

購入/パラメータ

1 結果

除外 1 NRND

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コンピュータ支援設計 モデル

状況

MHT2012N
データ・シート

新規採用非推奨

N true 0 PSPMHT2012Nja 4 アプリケーション・ノート Application Note t789 1 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band 1531470347639707726269 PSP 444.6 KB None None documents None 1531470347639707726269 /docs/en/data-sheet/MHT2012N.pdf 444629 /docs/en/data-sheet/MHT2012N.pdf MHT2012N documents N N 2018-07-13 MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet /docs/en/data-sheet/MHT2012N.pdf /docs/en/data-sheet/MHT2012N.pdf Data Sheet N 980000996212993340 2023-08-24 pdf N en Jul 12, 2018 980000996212993340 Data Sheet Y N MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet アプリケーション・ノート Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages エンジニアリング・ブリテン Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 4 B English 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) 1159978986098697260288 PSP 44.4 KB None None documents None 1159978986098697260288 /docs/en/package-information/98ASA10760D.pdf 44356 /docs/en/package-information/98ASA10760D.pdf SOT1664-1 documents N N 2016-10-31 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf /docs/en/package-information/98ASA10760D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins false 0 MHT2012N downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/MHT2012N.pdf 2018-07-13 1531470347639707726269 PSP 1 Jul 12, 2018 Data Sheet MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band None /docs/en/data-sheet/MHT2012N.pdf English documents 444629 None 980000996212993340 2023-08-24 N /docs/en/data-sheet/MHT2012N.pdf MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet /docs/en/data-sheet/MHT2012N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet 444.6 KB MHT2012N N 1531470347639707726269 パッケージ情報 1 /docs/en/package-information/98ASA10760D.pdf 2016-10-31 1159978986098697260288 PSP 4 Mar 21, 2016 Package Information 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) None /docs/en/package-information/98ASA10760D.pdf English documents 44356 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10760D.pdf 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins 44.4 KB SOT1664-1 N 1159978986098697260288 true Y Products

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