AFT09MS031N|31 W CW, 764-941 MHz, 13.6 V | NXP Semiconductors

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764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors

AFT09MS031N
アクティブ
The AFT09MS031NR1 and AFT09MS031GNR1 are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment.

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Features

  • Characterized for Operation from 764 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band (764 to 870 MHz)
  • 225°C Capable Plastic Package
  • Exceptional Thermal Performance
  • High Linearity for: TETRA, SSB, LTE
  • Cost-effective Over-molded Plastic Packaging
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
  • Output Stage 800 MHz Trunking Band Mobile Radio
  • Output Stage 900 MHz Trunking Band Mobile Radio

RF Performance Tables

764-941 MHz Narrowband

13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 P1dB
(W)
76418.074.132
87017.271.031
94115.768.131

764-870 MHz Broadband

13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 P1dB
(W)
76015.762.044
82015.763.037
87015.561.036

Ruggedness, 870 MHz

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
870(1)CW>65:1
at all Phase
Angles		1.2
(3 dB
Overdrive)		17No
Device
Degradation
870(2)2.0
(3 dB
Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760-870 MHz broadband reference circuit.

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N true 0 PSPAFT09MS031Nja 9 アプリケーション・ノート Application Note t789 3 エンジニアリング・ブリテン Technical Notes t521 1 サポート情報 Supporting Information t531 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ホワイト・ペーパ White Paper t530 1 ja ja ja データ・シート Data Sheet 1 1 1 English AFT09MS031N and AFT09MS031GN are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. 1337968484032697256932 PSP 1.0 MB None None documents None 1337968484032697256932 /docs/en/data-sheet/AFT09MS031N.pdf 1004538 /docs/en/data-sheet/AFT09MS031N.pdf AFT09MS031N documents N N 2016-10-31 AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT09MS031N.pdf /docs/en/data-sheet/AFT09MS031N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 31, 2012 980000996212993340 Data Sheet Y N AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet アプリケーション・ノート Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages エンジニアリング・ブリテン Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 2 6 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 7 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins サポート情報 Supporting Information 1 8 0 English Land Mobile Airfast<sup>&#174;</sup> products: AFT05MS031N and AFT09MS031N 1340065802618738876669 PSP 877.8 KB None None documents None 1340065802618738876669 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf 877821 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf LANDMOBILE_TRN_SI documents N N 2016-10-31 New Generation of Land Mobile Radio Products /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en Jun 15, 2012 371282830530968666 Supporting Information Y N New Generation of Land Mobile Radio Products ホワイト・ペーパ White Paper 1 9 2 English Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. 1415247676533716175304 PSP 911.8 KB None None documents None 1415247676533716175304 /docs/en/white-paper/RFPLASTICWP.pdf 911768 /docs/en/white-paper/RFPLASTICWP.pdf RFPLASTICWP documents N N 2016-10-31 Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf /docs/en/white-paper/RFPLASTICWP.pdf White Paper N 918633085541740938 2024-03-13 pdf N en Sep 24, 2015 918633085541740938 White Paper Y N Designing with Plastic RF Power Transistors White Paper false 0 AFT09MS031N downloads ja true 1 Y PSP アプリケーション・ノート 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 サポート情報 1 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf 2016-10-31 1340065802618738876669 PSP 8 Jun 15, 2012 Supporting Information Land Mobile Airfast<sup>&#174;</sup> products: AFT05MS031N and AFT09MS031N None /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf English documents 877821 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf New Generation of Land Mobile Radio Products /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N New Generation of Land Mobile Radio Products 877.8 KB LANDMOBILE_TRN_SI N 1340065802618738876669 データ・シート 1 /docs/en/data-sheet/AFT09MS031N.pdf 2016-10-31 1337968484032697256932 PSP 1 Aug 31, 2012 Data Sheet AFT09MS031N and AFT09MS031GN are designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. None /docs/en/data-sheet/AFT09MS031N.pdf English documents 1004538 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT09MS031N.pdf AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT09MS031N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N AFT09MS031NR1, AFT09MS031GNR1 764-941 MHz, 31 W, 13.6 V Wideband RF Power LDMOS Transistors - Data Sheet 1.0 MB AFT09MS031N N 1337968484032697256932 パッケージ情報 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 6 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 7 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 ホワイト・ペーパ 1 /docs/en/white-paper/RFPLASTICWP.pdf 2016-10-31 1415247676533716175304 PSP 9 Sep 24, 2015 White Paper Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. None /docs/en/white-paper/RFPLASTICWP.pdf English documents 911768 None 918633085541740938 2024-03-13 N /docs/en/white-paper/RFPLASTICWP.pdf Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf documents 918633085541740938 White Paper N en None Y pdf 2 N N Designing with Plastic RF Power Transistors White Paper 911.8 KB RFPLASTICWP N 1415247676533716175304 true Y Products

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