A2I09VD030N 製品情報|NXP

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
575
Frequency (Max) (MHz)
1300
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
46.1
Peak Power (Typ) (W)
40.5
Die Technology
LDMOS

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
A2I09VD030NR1(935336942528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1646.35

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
A2I09VD030NR1
(935336942528)
No
3
260
260
40
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A2I09VD030NR1
(935336942528)
854233
EAR99

詳細 A2I09VD030N

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 1300 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.