A3G18H500-04S 製品情報|NXP

特徴


Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V

パッケージ


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
1805
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
57.3
Peak Power (Typ) (W)
537
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
A3G18H500-04SR3(935351522128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
3306.2

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
A3G18H500-04SR3
(935351522128)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3G18H500-04SR3
(935351522128)
854129
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
A3G18H500-04SR3
(935351522128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

詳細 A3G18H500-04S

The A3G18H500-04S 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.