A3G26D055N 製品情報|NXP

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
100
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
47.4
Peak Power (Typ) (W)
55
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A3G26D055NT4(935402445528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
400.0

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
A3G26D055NT4
(935402445528)
No
3
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3G26D055NT4
(935402445528)
854233
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
A3G26D055NT4
(935402445528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

詳細 A3G26D055N

This A3G26D055N 8 W symmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100–2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.