A3I25D080N 製品情報|NXP

特徴


Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V

パッケージ


FM17F: FM17F, plastic, flange mount flat package; 17 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

購入オプション

操作機能

パラメータ
fi(RF) [max] (MHz)
2690
Number of pins
17
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.2
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2300, 2690
Efficiency (Typ) (%)
37
Peak Power (Typ) (W)
85
Frequency Band (Hz)
2300000000, 2690000000
パラメータ
Description
Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V
fi(RF) [min] (MHz)
2300
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
8.3 @ Avg
Gain (Typ) (dB)
29.6
Power Gain (Typ) (dB) @ f (MHz)
29.6 @ 2590
Frequency (Max) (MHz)
2690
Frequency (Min) (MHz)
2300
Frequency (Min-Max) (GHz)
2.3 to 2.69
frange [max] (MHz)
2690
frange [min] (MHz)
2300
Rth(j-a) (K/W)
1.2
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
49.3

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A3I25D080NR1(935411871528)
No
Yes
Certificate Of Analysis (CoA)
Yes
HREACH SVHC
1578.675

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛はんだ
A3I25D080NR1
(935411871528)
No
3
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3I25D080NR1
(935411871528)
854233
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
A3I25D080NR1
(935411871528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

詳細 A3I25D080N

The A3I25D080N and A3I25D080GN integrated Doherty circuit is designed with on-chip matching that makes it usable from 2300 to 2690 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.