AFV10700GS 製品情報|NXP

特徴


Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

パッケージ


CFM4: CFM4, ceramic, flange mount package; 4 terminals; 9.78 mm x 20.58 mm x 3.75 mm body

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
960
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
52
パラメータ
P1dB (Typ) (dBm)
58.5
P1dB (Typ) (W)
700
Die Technology
LDMOS

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
AFV10700GSR5(935362013178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6489.824

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
AFV10700GSR5
(935362013178)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
AFV10700GSR5
(935362013178)
854233
EAR99

詳細 AFV10700H

These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.