MMRF1050H|1050 W Peak over 850-950 MHz, 50 V | NXP Semiconductors

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1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor

MMRF1050H アクティブ

This MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.

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Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull or quadrature configuration
  • Qualified up to 50 V
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS compliant
  • Land- or sea-based UHF radar

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)		 1050 Peak 21.3 63.7

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Gps
(dB)		 ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)		 > 20:1 at all Phase Angles 15 W Peak (3 dB Overdrive) 50 No Device Degradation

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N true 0 PSPMMRF1050Hja 3 アプリケーション・ノート Application Note t789 2 データ・シート Data Sheet t520 1 ja ja ja データ・シート Data Sheet 1 1 0 English MMRF1050H Airfast RF power LDMOS transistor designed for short pulse applications operating at frequencies from 850 to 950 MHz. 1613066524809722574998 PSP 429.0 KB None None documents None 1613066524809722574998 /docs/en/data-sheet/MMRF1050H.pdf 429011 /docs/en/data-sheet/MMRF1050H.pdf MMRF1050H documents N N 2021-02-11 MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet /docs/en/data-sheet/MMRF1050H.pdf /docs/en/data-sheet/MMRF1050H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Feb 9, 2021 980000996212993340 Data Sheet Y N MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 MMRF1050H downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 データ・シート 1 /docs/en/data-sheet/MMRF1050H.pdf 2021-02-11 1613066524809722574998 PSP 1 Feb 9, 2021 Data Sheet MMRF1050H Airfast RF power LDMOS transistor designed for short pulse applications operating at frequencies from 850 to 950 MHz. None /docs/en/data-sheet/MMRF1050H.pdf English documents 429011 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MMRF1050H.pdf MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet /docs/en/data-sheet/MMRF1050H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1050H 1050 W Peak over 850-950 MHz, 50 V Data Sheet 429.0 KB MMRF1050H N 1613066524809722574998 true Y Products

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