デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs
- このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz.
NI-780H-4L, NI-780S-4L Package Image
製品詳細
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.
RF Performance Table
130, 230 MHz Broadband
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (100 µsec, 20% Duty Cycle) |
300 Peak | 230 | 26.5 | 74.0 | –16 |
| CW | 300 Avg. | 130 | 25.0 | 80.0 | –15 |
- Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
- 300 W CW Output Power
- 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
- Capable of 300 W CW Operation
購入/パラメータ
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
5 ドキュメント
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エンジニアリング・ブリテン
Using Data Sheet Impedances for RF LDMOS Devices
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パッケージ情報
NI-780S-4L
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パッケージ情報
98ASA10793D, NI-780H-4L
