MMRF1305HS 製品情報|NXP

特徴


Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V

パッケージ


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
1.8
Frequency (Max) (MHz)
2000
Supply Voltage (Typ) (V)
50
パラメータ
P1dB (Typ) (dBm)
50
P1dB (Typ) (W)
100
Die Technology
LDMOS

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MMRF1305HSR5(935318166178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4570.3

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
MMRF1305HSR5
(935318166178)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
MMRF1305HSR5
(935318166178)
854129
EAR99

詳細 MMRF1305H

MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.