MRF6V12250HS 製品情報|NXP

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MRF6V12250HS

NRND

MRF6V12250HS

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
1215
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.08
P1dB (Typ) (dBm)
54.4
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
960, 1215
Efficiency (Typ) (%)
65.5
Peak Power (Typ) (W)
338
Frequency Band (Hz)
960000000, 1215000000
パラメータ値
Description
Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
fi(RF) [min] (MHz)
960
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
275 @ Peak
P1dB (Typ) (W)
275
Gain (Typ) (dB)
20.3
Power Gain (Typ) (dB) @ f (MHz)
20.3 @ 1030
Frequency (Max) (MHz)
1215
Frequency (Min) (MHz)
960
Frequency (Min-Max) (GHz)
0.96000004 to 1.215
frange [max] (MHz)
1215
frange [min] (MHz)
960
Rth(j-a) (K/W)
0.08
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRF6V12250HSR5(935317106178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
4763.0

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
MRF6V12250HSR5
(935317106178)
No
260
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
MRF6V12250HSR5
(935317106178)
854233
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
MRF6V12250HSR5
(935317106178)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

詳細 MRF6V12250H

RF Power transistors, MRF6V12250HR3 and MRF6V12250HSR3, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.