A5G38H055N|3700-3980 MHz, 7.6 W Avg, 48 V | NXP Semiconductors

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3700-3980 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G38H055N
アクティブ

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This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3700 to 3980 MHz.

This part is characterized and performance is guaranteed for applications operating in the 3700 to 3980 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

3700–3980 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 45 mA, VGSB = –3.9 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)		 TD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
3700 MHz 14.7 55.5 8.5 –29.5
3840 MHz 14.9 53.2 8.5 –35.0
3980 MHz 14.7 53.0 8.2 –33.4
1. All data measured in reference circuit with device soldered to printed circuit board

購入/パラメータ

1 結果

マッチしていない 0 NRND

パーツ

説明を表示

注文

コンピュータ支援設計 モデル

状況

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

ダイ技術

A5G38H055N
データ・シート

アクティブ

3700

3980

48

47.4

55

GaN

N true 0 PSPA5G38H055Nja 4 アプリケーション・ノート Application Note t789 2 データ・シート Data Sheet t520 1 ファクト・シート Fact Sheet t523 1 ja ja ja データ・シート Data Sheet 1 1 1 English A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1680490077902727992953 PSP 197.1 KB None None documents None 1680490077902727992953 /docs/en/data-sheet/A5G38H055N.pdf 197089 /docs/en/data-sheet/A5G38H055N.pdf A5G38H055N documents N N 2023-04-02 A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G38H055N.pdf /docs/en/data-sheet/A5G38H055N.pdf Data Sheet N 980000996212993340 2023-08-09 pdf N en Mar 30, 2023 980000996212993340 Data Sheet Y N A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages ファクト・シート Fact Sheet 1 4 1 English NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. 1648159440615726957303 PSP 1.2 MB None None documents None 1648159440615726957303 /docs/en/fact-sheet/DMS5G3264FS.pdf 1174719 /docs/en/fact-sheet/DMS5G3264FS.pdf DMS5G3264FS documents N N 2022-03-24 GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf /docs/en/fact-sheet/DMS5G3264FS.pdf Fact Sheet N 736675474163315314 2025-01-28 pdf N en Dec 3, 2024 736675474163315314 Fact Sheet Y N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet false 0 A5G38H055N downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 データ・シート 1 /docs/en/data-sheet/A5G38H055N.pdf 2023-04-02 1680490077902727992953 PSP 1 Mar 30, 2023 Data Sheet A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A5G38H055N.pdf English documents 197089 None 980000996212993340 2023-08-09 N /docs/en/data-sheet/A5G38H055N.pdf A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G38H055N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A5G38H055N 3700–3980 MHz, 7.6 W Avg, 48 V Data Sheet 197.1 KB A5G38H055N N 1680490077902727992953 ファクト・シート 1 /docs/en/fact-sheet/DMS5G3264FS.pdf 2022-03-24 1648159440615726957303 PSP 4 Dec 3, 2024 Fact Sheet NXP’s extensive portfolio of RF power solutions for active antenna systems (AAS) includes GaN discrete mMIMO solutions for 64T64R and 32T32R solutions. None /docs/en/fact-sheet/DMS5G3264FS.pdf English documents 1174719 None 736675474163315314 2025-01-28 N /docs/en/fact-sheet/DMS5G3264FS.pdf GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet /docs/en/fact-sheet/DMS5G3264FS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 1 N N GaN Discrete mMIMO Solutions for 5G Telecom Infrastructure ─ Fact Sheet 1.2 MB DMS5G3264FS N 1648159440615726957303 true Y Products

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