1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs

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Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50 VDD Operation
  • Characterized from 30 V to 50 V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Table

230 MHz Narrowband

Typical Performance: VDD = 50 Vdc, IDQ = 100 mA
  • Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
    • 600 W Pulse Peak Power, 20% Duty Cycle, 100 µsec

購入/パラメータ










































































































N true 0 PSPMMRF1308Hja 5 アプリケーション・ノート Application Note t789 1 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ja ja ja データ・シート Data Sheet 1 1 0 English The MMRF1308HR5 and MMRF1308HSR5 are high ruggedness devices and are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz. 1406325033074702928904 PSP 567.0 KB None None documents None 1406325033074702928904 /docs/en/data-sheet/MMRF1308H.pdf 567011 /docs/en/data-sheet/MMRF1308H.pdf MMRF1308H documents N N 2016-10-31 MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1308H.pdf /docs/en/data-sheet/MMRF1308H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 24, 2014 980000996212993340 Data Sheet Y N MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet アプリケーション・ノート Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note エンジニアリング・ブリテン Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 2 4 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MMRF1308H downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/MMRF1308H.pdf 2016-10-31 1406325033074702928904 PSP 1 Jul 24, 2014 Data Sheet The MMRF1308HR5 and MMRF1308HSR5 are high ruggedness devices and are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz. None /docs/en/data-sheet/MMRF1308H.pdf English documents 567011 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MMRF1308H.pdf MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet /docs/en/data-sheet/MMRF1308H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet 567.0 KB MMRF1308H N 1406325033074702928904 パッケージ情報 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 4 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 true Y Products

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アプリケーション・ノート (1)
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