136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor

AFT05MS006N 新規採用非推奨
  • このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
The AFT05MS006NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

製品画像を見る

Features

  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
  • Output Stage VHF Band Handheld Radio
  • Output Stage UHF Band Handheld Radio
  • Output Stage for 700-800 MHz Handheld Radio

RF Performance Tables

Narrowband Performance

(7.5 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency
(MHz)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
520(1)18.373.06.0

Wideband Performance

(7.5 Vdc, TA = 25°C, CW)
Frequency
(MHz)		 Pin
(W)		 Gps
(dB)		 ηD
(%)		 Pout
(W)
136-1740.1915.560.06.0
440-520(2)0.1516.365.06.4
760-870(3)0.2015.258.56.7

Ruggedness, 520 MHz

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
520(1)CW> 65:1
at all Phase
Angles		 0.12
(3 dB
Overdrive)		10.8No
Device
Degradation
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 440-520 MHz UHF broadband reference circuit.
3. Measured in 760-870 MHz UHF broadband reference circuit.

購入/パラメータ

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPAFT05MS006Nja 5 アプリケーション・ノート Application Note t789 2 サポート情報 Supporting Information t531 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English The AFT05MS006N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in mobile radio equipment. 1393022927709721525521 PSP 934.8 KB None None documents None 1393022927709721525521 /docs/en/data-sheet/AFT05MS006N.pdf 934837 /docs/en/data-sheet/AFT05MS006N.pdf AFT05MS006N documents N N 2016-10-31 AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/AFT05MS006N.pdf /docs/en/data-sheet/AFT05MS006N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 24, 2014 980000996212993340 Data Sheet Y N AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages パッケージ情報 Package Information 1 4 A English 1370451903375708697913 PSP 55.3 KB None None documents None 1370451903375708697913 /docs/en/package-information/98ASA00476D.pdf 55307 /docs/en/package-information/98ASA00476D.pdf SOT1811-2 documents N N 2016-10-31 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf /docs/en/package-information/98ASA00476D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins サポート情報 Supporting Information 1 5 0 English Mobile radio products deliver performance for today&#8217;s public safety and professional mobile radio applications. 1394689737398733974567 PSP 907.1 KB None None documents None 1394689737398733974567 /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf 907101 /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf AIRFAST_MOBILE_RADIO_TRN_SI documents N N 2016-10-31 Airfast<sup>®</sup> Mobile Radio Solutions /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en Mar 12, 2014 371282830530968666 Supporting Information Y N Airfast<sup>®</sup> Mobile Radio Solutions false 0 AFT05MS006N downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 サポート情報 1 /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf 2016-10-31 1394689737398733974567 PSP 5 Mar 12, 2014 Supporting Information Mobile radio products deliver performance for today&#8217;s public safety and professional mobile radio applications. None /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf English documents 907101 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf Airfast<sup>®</sup> Mobile Radio Solutions /docs/en/supporting-information/AIRFAST_MOBILE_RADIO_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N Airfast<sup>®</sup> Mobile Radio Solutions 907.1 KB AIRFAST_MOBILE_RADIO_TRN_SI N 1394689737398733974567 データ・シート 1 /docs/en/data-sheet/AFT05MS006N.pdf 2016-10-31 1393022927709721525521 PSP 1 Feb 24, 2014 Data Sheet The AFT05MS006N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in mobile radio equipment. None /docs/en/data-sheet/AFT05MS006N.pdf English documents 934837 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT05MS006N.pdf AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/AFT05MS006N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet 934.8 KB AFT05MS006N N 1393022927709721525521 パッケージ情報 1 /docs/en/package-information/98ASA00476D.pdf 2016-10-31 1370451903375708697913 PSP 4 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00476D.pdf English documents 55307 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00476D.pdf 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins /docs/en/package-information/98ASA00476D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00476D, PLD-1.5W, 6.6x5.84x1.74, Pitch 4.6, 3 Pins 55.3 KB SOT1811-2 N 1370451903375708697913 true Y Products

ドキュメント

クイック・リファレンス ドキュメンテーションの種類.

フィルタ

5 ドキュメント

コンパクトリスト

アプリケーション・ノート (2)
サポート情報 (1)
データ・シート (1)
パッケージ情報 (1)

デザイン・ファイル

クイック・リファレンス 設計・ファイルの種類.
フィルタ

1-5の 6 設計・ファイル

全て表示

サポート

お困りのことは何ですか？?

  • Narrow your search
検索