35 W CW over 1.8-512 MHz, 65 V Wideband RF Power LDMOS Transistor

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Features

  • Unmatched input and output allowing wide frequency range utilization
  • 50 ohm native output impedance
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

VDD = 65 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
1.8-54 (1,2)CW32 CW24.158.1
30-512 (2)CW26 CW15.142.3
230 (3)CW35 CW24.875.8

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(dBm)
Test
Voltage
Result
230 (3)CW> 65:1
at all Phase Angles
23.5
(3 dB Overdrive)
65No Device Degradation
1. Measured in 1.8-54 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

購入/パラメータ










































































































N true 0 PSPMRFX035Hja 4 アプリケーション・ノート Application Note t789 1 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English MRFX035H 35 W CW over 1.8-512 MHz, 65 V RF power transistor for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. 1545111267004737301798 PSP 495.2 KB None None documents None 1545111267004737301798 /docs/en/data-sheet/MRFX035H.pdf 495154 /docs/en/data-sheet/MRFX035H.pdf MRFX035H documents N N 2018-12-17 MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX035H.pdf /docs/en/data-sheet/MRFX035H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 17, 2018 980000996212993340 Data Sheet Y N MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet アプリケーション・ノート Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages エンジニアリング・ブリテン Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 4 O English 98ASA00795D, NI-360H-2SB 1415229469957723384286 PSP 49.4 KB None None documents None 1415229469957723384286 /docs/en/package-information/98ASA00795D.pdf 49376 /docs/en/package-information/98ASA00795D.pdf SOT1791-1 documents N N 2016-10-31 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf /docs/en/package-information/98ASA00795D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 5, 2014 302435339416912908 Package Information D N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB false 0 MRFX035H downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/MRFX035H.pdf 2018-12-17 1545111267004737301798 PSP 1 Dec 17, 2018 Data Sheet MRFX035H 35 W CW over 1.8-512 MHz, 65 V RF power transistor for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. None /docs/en/data-sheet/MRFX035H.pdf English documents 495154 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX035H.pdf MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX035H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MRFX035H 35 W CW, 1.8-512 MHz, 65 V Data Sheet 495.2 KB MRFX035H N 1545111267004737301798 パッケージ情報 1 /docs/en/package-information/98ASA00795D.pdf 2016-10-31 1415229469957723384286 PSP 4 Nov 5, 2014 Package Information 98ASA00795D, NI-360H-2SB None /docs/en/package-information/98ASA00795D.pdf English documents 49376 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00795D.pdf 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB /docs/en/package-information/98ASA00795D.pdf documents 302435339416912908 Package Information N en None D pdf O N N 98ASA00795D, NI-C, 20.32x5.84x3.81, Pitch 7.14, 3 Pins, NI-360H-2SB 49.4 KB SOT1791-1 N 1415229469957723384286 true Y Products

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