AFT31150N|150 W Pulse, 2700-3100 MHz, 32 V | NXP Semiconductors

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150 W Pulse over 2700-3100 MHz, 32 V Airfast® RF Power LDMOS Transistor

AFT31150N 新規採用非推奨
  • このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
The AFT31150N RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.

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Features

  • Characterized with series equivalent large-signal impedance parameters
  • Internally matched for ease of use
  • Qualified up to a maximum of 32 VDD operation
  • Integrated ESD protection
  • Greater negative gate-source voltage range for improved Class C operation
  • Recommended driver: AFIC31025N (25 W)
  • RoHS Compliant
  • Commercial S-Band radar systems
  • Maritime radar
  • Weather radar

RF Performance Tables

Typical Performance

In 2700-3100 MHz reference circuit, VDD = 32 Vdc
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)		 IRL
(dB)
2700-3100(1)Pulse (300 µsec,
15% Duty Cycle)		 150 Peak17.249.0–6

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
3100(2)Pulse (300 µsec,
15% Duty Cycle)		10:1
at all Phase Angles		 6.8 Peak
(3 dB Overdrive)		32No Device Degradation
1. The values shown are the center band performance numbers across the indicated frequency range.
2. Measured in 3100 MHz narrowband production test fixture.

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N true 0 PSPAFT31150Nja 5 アプリケーション・ノート Application Note t789 2 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for S-Band radars. 1495921519707724513934 PSP 776.5 KB None None documents None 1495921519707724513934 /docs/en/data-sheet/AFT31150N.pdf 776541 /docs/en/data-sheet/AFT31150N.pdf AFT31150N documents N N 2017-05-27 AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet /docs/en/data-sheet/AFT31150N.pdf /docs/en/data-sheet/AFT31150N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 25, 2017 980000996212993340 Data Sheet Y N AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages エンジニアリング・ブリテン Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 5 D English 98ASA10831D, 2021-03, OM780-2 Straight Lead, OM-780-2L 1234532094722742938348 PSP 177.8 KB None None documents None 1234532094722742938348 /docs/en/package-information/98ASA10831D.pdf 177849 /docs/en/package-information/98ASA10831D.pdf SOT1823-1 documents N N 2016-10-31 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins /docs/en/package-information/98ASA10831D.pdf /docs/en/package-information/98ASA10831D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 8, 2019 302435339416912908 Package Information D N 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins false 0 AFT31150N downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/AFT31150N.pdf 2017-05-27 1495921519707724513934 PSP 1 May 25, 2017 Data Sheet AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for S-Band radars. None /docs/en/data-sheet/AFT31150N.pdf English documents 776541 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT31150N.pdf AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet /docs/en/data-sheet/AFT31150N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet 776.5 KB AFT31150N N 1495921519707724513934 パッケージ情報 1 /docs/en/package-information/98ASA10831D.pdf 2016-10-31 1234532094722742938348 PSP 5 Feb 8, 2019 Package Information 98ASA10831D, 2021-03, OM780-2 Straight Lead, OM-780-2L None /docs/en/package-information/98ASA10831D.pdf English documents 177849 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10831D.pdf 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins /docs/en/package-information/98ASA10831D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins 177.8 KB SOT1823-1 N 1234532094722742938348 true Y Products

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