A3T09S100N 製品情報|NXP

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A3T09S100N

NRND

A3T09S100N

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
941
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
32
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.9
P1dB (Typ) (dBm)
50
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
136, 941
Efficiency (Typ) (%)
33.8
Frequency Band (Hz)
136000000, 941000000
パラメータ値
Description
Airfast RF Power LDMOS Transistor, 100 W CW over 136 to 941 MHz, 32 V
fi(RF) [min] (MHz)
136
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
90 @ CW
P1dB (Typ) (W)
90
Gain (Typ) (dB)
22.8
Power Gain (Typ) (dB) @ f (MHz)
22.8 @ 880
Frequency (Max) (MHz)
941
Frequency (Min) (MHz)
136
Frequency (Min-Max) (GHz)
0.136 to 0.94100004
frange [max] (MHz)
941
frange [min] (MHz)
136
Rth(j-a) (K/W)
0.9
Matching
unmatched
Modes of Operation
continuous wave

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A3T09S100NR1(935419977528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
529.55

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
A3T09S100NR1
(935419977528)
No
3
260
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
A3T09S100NR1
(935419977528)
854233
EAR99

詳細 A3T09S100N

Designed for two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in radio equipment.