MRFE6VP5150N 製品情報|NXP

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MRFE6VP5150N

NRND

MRFE6VP5150N

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.21
P1dB (Typ) (dBm)
51.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
72
Peak Power (Typ) (W)
180
Frequency Band (Hz)
1800000, 600000000
パラメータ値
Description
WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
150 @ CW
P1dB (Typ) (W)
150
Gain (Typ) (dB)
26.3
Power Gain (Typ) (dB) @ f (MHz)
26.3 @ 230
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.21
Matching
unmatched
Modes of Operation
continuous wave

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRFE6VP5150NR1(935312397528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1634.95

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
MRFE6VP5150NR1
(935312397528)
No
3
260
260
40
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
MRFE6VP5150NR1
(935312397528)
854129
EAR99

詳細 MRFE6VP5150N

These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.