MRFE6VS25L 製品情報|NXP

オートモーティブ

インダストリアル

コンスーマ

テクノロジ

MRFE6VS25L

NRND

MRFE6VS25L

NRND

特徴

Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

  • データ・シート:
  • PDF

パッケージ

CFM2F: CFM2F, ceramic, flange mount flat package; 2 terminals; 5.84 mm x 20.32 mm x 3.81 mm body

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
2000
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.4
P1dB (Typ) (dBm)
44
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 2000
Efficiency (Typ) (%)
74
Peak Power (Typ) (W)
35
Frequency Band (Hz)
1800000, 2000000000
パラメータ値
Description
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
25 @ Peak
P1dB (Typ) (W)
25
Gain (Typ) (dB)
25.9
Power Gain (Typ) (dB) @ f (MHz)
25.9 @ 512
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.4
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRFE6VS25LR5(935320096178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
2937.8

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
MRFE6VS25LR5
(935320096178)
No
260
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
MRFE6VS25LR5
(935320096178)
854129
EAR99

詳細 MRFE6VS25L

The MRFE6VS25L is an RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using our enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.