MW6S004N 製品情報|NXP

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MW6S004N

NRND

MW6S004N

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
2000
Number of pins
4
Amp Class
AB
Test Signal
2-TONE
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
8.8
P1dB (Typ) (dBm)
36
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1, 2000
Efficiency (Typ) (%)
33
Frequency Band (Hz)
1000000, 2000000000
Intermodulation Distortion - IMD (Typ) (dBc)
-34
Description
Lateral N-Channel RF Power MOSFET, 1-2000 MHz, 4 W, 28 V
パラメータ値
fi(RF) [min] (MHz)
1
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
4 @ PEP
P1dB (Typ) (W)
4
Gain (Typ) (dB)
18
Power Gain (Typ) (dB) @ f (MHz)
18 @ 1960
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1
Frequency (Min-Max) (GHz)
0.001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1
Rth(j-a) (K/W)
8.8
Matching
unmatched
Modes of Operation
dual-tone modulation
Intermodulation Distortion - IM3 (Typ) (dBc)
-34

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MW6S004NT1(935320257515)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
280.0

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
MW6S004NT1
(935320257515)
No
3
260
260
40
40

配送

Part/12NC関税分類番号（米国)免責事項:
MW6S004NT1
(935320257515)
854129

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
MW6S004NT1
(935320257515)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

詳細 MW6S004NT1

The MW6S004NT1 is designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.