A6G35S006N 製品情報|NXP

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
5000
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
39.8
Peak Power (Typ) (W)
9.5
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A6G35S006NT6(935464435528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
400.0

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
A6G35S006NT6
(935464435528)
No
3
260
40

配送

Part/12NC関税分類番号(米国)免責事項:
A6G35S006NT6
(935464435528)
854129

詳細 A6G35S006N

This A6G35S006N 28 dBm average, 10 W peak RF power GaN transistor is designed for cellular base station applications covering the frequency range of 2496 to 5000 MHz.