Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
パッケージ
SSOP32: SSOP32, plastic, shrink small outline package; 32 terminals; 0.65 mm pitch; 7.5 mm x 11 mm x 2.5 mm body
購入オプション
MC33GD3100EK
生産終了 (EOL)
12NC: 935312748574
詳細
注文
MC33GD3100EKR2
生産終了 (EOL)
12NC: 935312748518
詳細
注文
操作機能
| パラメータ | 値 |
|---|---|
Device Function | HV Isolated IGBT & SiC Single gate driver IC |
Logic Level (V) | 5 |
Frequency (Max) (kHz) | 40 |
Load Current (IL) [TYP] (A) | 15 |
Number of Channels | 1 |
Protection | desaturation, overcurrent, overtemperature, short-circuit, undervoltage |
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON)) | 500 |
Load Supply Voltage (Min) (V) | -12 |
| パラメータ | 値 |
|---|---|
Load Supply Voltage (Max) (V) | 25 |
Supply Voltage [min] (V) | 5 |
Supply Voltage [max] (V) | 40 |
Interface and Input Control | SPI / PWM |
SPI [bits] | 24 |
Ambient Operating Temperature (Min to Max) (℃) | -40 to 125 |
ASIL Certification | up to ASIL D |
環境
| Part/12NC | 鉛フリー | EU RoHS | ハロゲンフリー | RHFインジケーター | REACH SVHC | Weight (mg) |
|---|---|---|---|---|---|---|
MC33GD3100EK(935312748574) | Yes | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 467.3 |
MC33GD3100EKR2(935312748518) | Yes | Yes Certificate Of Analysis (CoA) | Yes | | REACH SVHC | 467.3 |
品質
| Part/12NC | 安全保障機能安全 | 吸湿感度レベル (MSL) | Peak Package Body Temperature (PPT) (C°) | Maximum Time at Peak Temperatures (s) | |||
|---|---|---|---|---|---|---|---|
| 鉛フリーはんだ | 鉛フリーはんだ | 鉛フリーはんだ | |||||
MC33GD3100EK (935312748574) | ISO 26262 | 3 | 260 | 40 | |||
MC33GD3100EKR2 (935312748518) | ISO 26262 | 3 | 260 | 40 | |||
配送
| Part/12NC | 関税分類番号（米国)免責事項: |
|---|---|
MC33GD3100EK (935312748574) | 854239 |
MC33GD3100EKR2 (935312748518) | 854239 |
製造終了品・代替品データ
| Part/12NC | 製造終了のお知らせ | 最終購入日 | 最終納品日 | 交換 |
|---|---|---|---|---|
MC33GD3100EK (935312748574) | NOTICE | 2023-04-26 | 2023-11-26 | MC33GD3100BEK (935444121574) |
MC33GD3100EKR2 (935312748518) | NOTICE | 2023-04-26 | 2023-11-26 | MC33GD3100BEKR2 (935444121518) |
製品変更のお知らせ
| Part/12NC | 発行日 | 有効期限 | PCN | タイトル |
|---|---|---|---|---|
MC33GD3100EK (935312748574) | 2023-01-26 | 2023-01-27 | 202301026DN | Discontinuation Notification for NXP PL DES High Voltage Gate Driver GD3100 |
MC33GD3100EKR2 (935312748518) | ||||
MC33GD3100EK (935312748574) | 2020-12-15 | 2020-12-16 | 202011011I | NXP Will Add a Sealed Date to the Product Label |
MC33GD3100EKR2 (935312748518) | ||||
MC33GD3100EK (935312748574) | 2020-03-25 | 2020-03-26 | 202003027I | MC33GD3100 Data Sheet Update to Rev 9.0 (Corrections and Technical Clarifications) |
MC33GD3100EKR2 (935312748518) | ||||
MC33GD3100EK (935312748574) | 2017-12-20 | 2018-01-03 | 201710023I | New PQ Label Input for Non-MPQ Shipments |
詳細 GD3100
The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.
- Current and temperature sense minimizes IGBT/SiC stress during faults
- Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
- Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
- Self-test, control and protection functions are included for the design of high-reliability systems