Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
パッケージ
SSOP32: SSOP32, plastic, shrink small outline package; 32 terminals; 0.65 mm pitch; 7.5 mm x 11 mm x 2.5 mm body
購入オプション
MGD3100BM58EK
アクティブ
12NC: 935444984574
詳細
数量
単価
| 1 - 25 | $6.04 |
| 26 - 99 | $5.58 |
| 100+ | $5.12 |
注文
在庫あり:540
代理店からの注文MGD3100BM58EKR2
アクティブ
12NC: 935444984518
詳細
注文
操作機能
| パラメータ | 値 |
|---|---|
Device Function | HV Isolated IGBT & SiC Single gate driver IC |
Logic Level (V) | 5 |
Frequency (Max) (kHz) | 40 |
Load Current (IL) [TYP] (A) | 15 |
Number of Channels | 1 |
Protection | desaturation, overcurrent, overtemperature, short-circuit, undervoltage |
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON)) | 500 |
| パラメータ | 値 |
|---|---|
Load Supply Voltage (Min) (V) | -12 |
Load Supply Voltage (Max) (V) | 25 |
Supply Voltage [min] (V) | 5 |
Supply Voltage [max] (V) | 40 |
SPI [bits] | 24 |
Ambient Operating Temperature (Min to Max) (℃) | -40 to 125 |
ASIL Certification | up to ASIL D |
環境
| Part/12NC | 鉛フリー | EU RoHS | ハロゲンフリー | RHFインジケーター | REACH SVHC | Weight (mg) |
|---|---|---|---|---|---|---|
MGD3100BM58EK(935444984574) | Yes | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 480.0 |
MGD3100BM58EKR2(935444984518) | Yes | Yes Certificate Of Analysis (CoA) | Yes | | REACH SVHC | 480.0 |
品質
| Part/12NC | 安全保障機能安全 | 吸湿感度レベル (MSL) | Peak Package Body Temperature (PPT) (C°) | Maximum Time at Peak Temperatures (s) | |||
|---|---|---|---|---|---|---|---|
| 鉛フリーはんだ | 鉛フリーはんだ | 鉛フリーはんだ | |||||
MGD3100BM58EK (935444984574) | ISO 26262 | 3 | 260 | 40 | |||
MGD3100BM58EKR2 (935444984518) | ISO 26262 | 3 | 260 | 40 | |||
配送
| Part/12NC | 関税分類番号（米国)免責事項: |
|---|---|
MGD3100BM58EK (935444984574) | 854239 |
MGD3100BM58EKR2 (935444984518) | 854239 |
詳細 GD3100
The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.
- Current and temperature sense minimizes IGBT/SiC stress during faults
- Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
- Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
- Self-test, control and protection functions are included for the design of high-reliability systems