Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
SSOP32: SSOP32, plastic, shrink small outline package; 32 terminals; 0.65 mm pitch; 7.5 mm x 11 mm x 2.5 mm body
12NC: 935444121574
詳細
数量
単価
1 - 25 | $5.75 |
26 - 98 | $5.30 |
99+ | $4.86 |
注文
Normally ships in 1-2 business days.
代理店からの注文12NC: 935444121518
詳細
注文
パラメータ | 値 |
---|---|
Device Function | HV Isolated IGBT & SiC Single gate driver IC |
Logic Level (V) | 5 |
Frequency (Max) (kHz) | 40 |
Load Current (IL) [TYP] (A) | 15 |
Number of Channels | 1 |
Protection | desaturation, overcurrent, overtemperature, short-circuit, undervoltage |
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON)) | 500 |
パラメータ | 値 |
---|---|
Load Supply Voltage (Min) (V) | -12 |
Load Supply Voltage (Max) (V) | 25 |
Supply Voltage [min] (V) | 5 |
Supply Voltage [max] (V) | 40 |
SPI [bits] | 24 |
Ambient Operating Temperature (Min to Max) (℃) | -40 to 125 |
ASIL Certification | up to ASIL D |
Part/12NC | 鉛フリー | EU RoHS | ハロゲンフリー | RHFインジケーター | REACH SVHC | Weight (mg) |
---|---|---|---|---|---|---|
MC33GD3100BEK(935444121574) | Yes | Yes Certificate Of Analysis (CoA) | Yes | REACH SVHC | 467.3 | |
MC33GD3100BEKR2(935444121518) | Yes | Yes Certificate Of Analysis (CoA) | Yes | REACH SVHC | 467.3 |
Part/12NC | 安全保障機能安全 | 吸湿感度レベル (MSL) | Peak Package Body Temperature (PPT) (C°) | Maximum Time at Peak Temperatures (s) | |||
---|---|---|---|---|---|---|---|
鉛フリーはんだ | 鉛フリーはんだ | 鉛フリーはんだ | |||||
MC33GD3100BEK (935444121574) | ISO 26262 | 3 | 260 | 40 | |||
MC33GD3100BEKR2 (935444121518) | ISO 26262 | 3 | 260 | 40 |
Part/12NC | 関税分類番号(米国)免責事項: |
---|---|
MC33GD3100BEK (935444121574) | 854239 |
MC33GD3100BEKR2 (935444121518) | 854239 |
The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.