A2I20H060N 製品情報|NXP

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A2I20H060N

NRND

A2I20H060N

NRND

特徴

Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V

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パッケージ

FM15F: FM15F, plastic, flange mount flat package; 15 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
2200
Number of pins
15
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.6
P1dB (Typ) (dBm)
48
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1800, 2200
Efficiency (Typ) (%)
43.8
Peak Power (Typ) (W)
74
Frequency Band (Hz)
1800000000, 2200000000
パラメータ値
Description
Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
fi(RF) [min] (MHz)
1800
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
12 @ AVG
P1dB (Typ) (W)
63
Gain (Typ) (dB)
28.4
Power Gain (Typ) (dB) @ f (MHz)
28.4 @ 1840
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
1800
Frequency (Min-Max) (GHz)
1.8000001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
1800
Rth(j-a) (K/W)
1.6
Matching
input impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
48.7

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
A2I20H060NR1(935318716528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1646.35

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
A2I20H060NR1
(935318716528)
No
3
260
260
40
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
A2I20H060NR1
(935318716528)
854233
EAR99

詳細 A2I20H060N

The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.