AFT09MS007N 製品情報|NXP

特徴


Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V

パッケージ


PLD4L: PLD4L, plastic, RF over-molded package designation; 4 terminals; 0 mm pitch; 5.85 mm x 6.61 mm x 1.74 mm body

購入オプション

操作機能

パラメータ
fi(RF) [max] (MHz)
941
Number of pins
4
Amp Class
AB
Test Signal
1-TONE
Supply Voltage (Typ) (V)
7.5
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.1
P1dB (Typ) (dBm)
38.6
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 941
Efficiency (Typ) (%)
71
Frequency Band (Hz)
1800000, 941000000
Description
Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
パラメータ
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
7.3 @ 1-Tone
P1dB (Typ) (W)
7.3
Gain (Typ) (dB)
15.2
Power Gain (Typ) (dB) @ f (MHz)
15.2 @ 870
Frequency (Max) (MHz)
941
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.94100004
frange [max] (MHz)
941
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.1
Matching
unmatched
Modes of Operation
single-tone modulation

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
AFT09MS007NT1(935318254515)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
280.0

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
AFT09MS007NT1
(935318254515)
No
3
260
260
40
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
AFT09MS007NT1
(935318254515)
854129
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
AFT09MS007NT1
(935318254515)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFT09MS007NT1
(935318254515)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
AFT09MS007NT1
(935318254515)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

詳細 AFT09MS007N

The AFT09MS007NT1 is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common source amplifier applications in handheld radio equipment.