MMRF1004N 製品情報|NXP

MMRF1004N

アクティブ

MMRF1004N

アクティブ

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操作機能

パラメータ
fi(RF) [max] (MHz)
2200
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
2.3
P1dB (Typ) (dBm)
40
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1600, 2200
Efficiency (Typ) (%)
15
Peak Power (Typ) (W)
14
Frequency Band (Hz)
1600000000, 2200000000
Intermodulation Distortion - IMD (Typ) (dBc)
-47
パラメータ
Description
GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V
fi(RF) [min] (MHz)
1600
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1 @ AVG
P1dB (Typ) (W)
10
Gain (Typ) (dB)
15.5
Power Gain (Typ) (dB) @ f (MHz)
15.5 @ 2170
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
1600
Frequency (Min-Max) (GHz)
1.6 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
1600
Rth(j-a) (K/W)
2.3
Matching
input impedance matching
Modes of Operation
wideband code division multiple access
Intermodulation Distortion - IM3 (Typ) (dBc)
-47

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詳細 MMRF1004N

The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.