MRF6V14300H 製品情報|NXP

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MRF6V14300H

NRND

MRF6V14300H

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
1400
Number of pins
2
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.13
P1dB (Typ) (dBm)
55.2
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1200, 1400
Efficiency (Typ) (%)
60.5
Peak Power (Typ) (W)
339
Frequency Band (Hz)
1200000000, 1400000000
パラメータ値
Description
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
fi(RF) [min] (MHz)
1200
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
330 @ Peak
P1dB (Typ) (W)
330
Gain (Typ) (dB)
18
Power Gain (Typ) (dB) @ f (MHz)
18 @ 1400
Frequency (Max) (MHz)
1400
Frequency (Min) (MHz)
1200
Frequency (Min-Max) (GHz)
1.2 to 1.4000001
frange [max] (MHz)
1400
frange [min] (MHz)
1200
Rth(j-a) (K/W)
0.13
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRF6V14300HR5(935313404178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6439.6

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
MRF6V14300HR5
(935313404178)
No
260
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
MRF6V14300HR5
(935313404178)
854233
EAR99

詳細 MRF6V14300H

The MRF6V14300HR3 and MRF6V14300HSR3 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These device are suitable for use in pulsed applications.