MRFE6VP61K25HS 製品情報|NXP

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MRFE6VP61K25HS

NRND

MRFE6VP61K25HS

NRND

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
1-TONE
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.15
P1dB (Typ) (dBm)
61
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
74.6
Peak Power (Typ) (W)
1600
Frequency Band (Hz)
1800000, 600000000
パラメータ値
Description
Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1250 @ CW
P1dB (Typ) (W)
1250
Gain (Typ) (dB)
22.9
Power Gain (Typ) (dB) @ f (MHz)
22.9 @ 230
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.15
Matching
unmatched
Modes of Operation
single-tone modulation

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRFE6VP61K25HSR5(935314409178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
8488.4

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
MRFE6VP61K25HSR5
(935314409178)
No
260
40

配送

Part/12NC関税分類番号（米国)免責事項:輸出規制品目番号（米国）
MRFE6VP61K25HSR5
(935314409178)
854129
EAR99

詳細 MRFE6VP61K25H

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.