MRFE6VP6600N 製品情報|NXP

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MRFE6VP6600N

NRND

MRFE6VP6600N

NRND

特徴

Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V

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パッケージ

FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.96 mm x 20.57 mm x 3.81 mm body

購入オプション

操作機能

パラメータ値
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.033
P1dB (Typ) (dBm)
57.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
81
Peak Power (Typ) (W)
900
Frequency Band (Hz)
1800000, 600000000
パラメータ値
Description
Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
600 @ CW
P1dB (Typ) (W)
600
Gain (Typ) (dB)
24
Power Gain (Typ) (dB) @ f (MHz)
24 @ 98
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.033
Matching
unmatched
Modes of Operation
continuous wave
Peak Power (Typ) (dBm)
59.5

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MRFE6VP6600NR3(935312987528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3048.7

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
MRFE6VP6600NR3
(935312987528)
No
3
260
40

配送

Part/12NC関税分類番号（米国)免責事項:
MRFE6VP6600NR3
(935312987528)
854129

詳細 MRFE6VP6600N

These high ruggedness devices, MRFE6VP6600N and MRFE6VP6600GN, are designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 600 MHz.